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MA3XD11 - Silicon epitaxial planar type

Key Features

  • 1 MA3XD11 IF  V F 10 Ta = 125°C 1 1.0 Schottky Barrier Diodes (SBD) VF  Ta IR  VR Ta = 125°C 10.
  • 1 10.
  • 2 Forward voltage VF (V) Forward current IF (A) Reverse current IR (A) 75°C 10.
  • 1 10.
  • 2 10.
  • 3 10.
  • 4 10.
  • 5 10.
  • 6 25°C.
  • 20°C 0.8 10.
  • 3 75°C 0.6 10.
  • 4 25°C 0.4 IF = 1 A 10.
  • 5 0.2 100 mA 10 mA 10.
  • 6 0 0.2 0.4 0.6 0.8 1 1.2 0.
  • 40 10.
  • 7 0 40 80 120 160 0.

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Datasheet Details

Part number MA3XD11
Manufacturer Panasonic
File Size 41.28 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3XD11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 20 25 1.0 3 125 −55 to + 125 V V A A °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M6K Internal Connection Note) *1 : With a alumina PC board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 20 V IF = 1.