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MA3XD17 - Silicon epitaxial planar type

Key Features

  • Mini type 3-pin package.
  • High breakdown voltage VR = 100 V 2.8 0.65 ± 0.15 + 0.2.
  • 0.3 1.5.
  • 0.05 + 0.25 0.65 ± 0.15 0.95 2.9.
  • 0.05 1.9 ± 0.2 1 3 2 + 0.2 0.95 1.45 + 0.2.
  • 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Non-repetitive peak forward surge current.
  • Average forward current Junction temperature Storage temperature Symbol VR VRM IFSM IF(AV) Tj Tstg Rating 100 100 1.5 300 125.
  • 55 to +150 Unit V V A.

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Datasheet Details

Part number MA3XD17
Manufacturer Panasonic
File Size 44.16 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3XD17 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3XD17 Silicon epitaxial planar type Unit : mm For rectification For protection against reverse current I Features • Mini type 3-pin package • High breakdown voltage VR = 100 V 2.8 0.65 ± 0.15 + 0.2 − 0.3 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.95 2.9 − 0.05 1.9 ± 0.2 1 3 2 + 0.2 0.95 1.45 + 0.2 − 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Non-repetitive peak forward surge current* Average forward current Junction temperature Storage temperature Symbol VR VRM IFSM IF(AV) Tj Tstg Rating 100 100 1.