MA3XD15 - Silicon epitaxial planar type

Panasonic

Key Features

1 3 2 0.95 1.45 + 0.2.
0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current.
1 Average forward current.
2 Junction temperature Storage temperature Symbol VR VRRM IFSM IF(AV) Tj Tstg Rating 20 25 3 1.0 125.
55 to +125 Unit V V A A °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M5N Internal Connection 1 3 2 Note).
1 : The peak-to-peak value i.

MA3XD15 silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3XD15
Manufacturer	Panasonic
File Size	38.27 KB
Description	Silicon epitaxial planar type
Datasheet	MA3XD15 Datasheet

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Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type Unit : mm For rectification For protection against reverse current 2.9 − 0.05 2.8 0.65 ± 0.15 + 0.2 − 0.3 + 0.25 1.5 − 0.05 0.65 ± 0.15 0.95 • Mini type 3-pin package • Low VF or Low IR type: VF < 0.45 V, IR < 100 µA • Allowing to rectify under (IF(AV) = 1 A) condition 1.9 ± 0.2 + 0.2 I Features 1 3 2 0.95 1.45 + 0.2 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current*1 Average forward current*2 Junction temperature Storage temperature Symbol VR VRRM IFSM IF(AV) Tj Tstg Rating 20 25 3 1.