q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature.
Sine half wave : 10ms/cycle
Symbol VRRM VRSM IF(AV) IFSM.
Tj Tstg
Rating 200 200 20 150.
40 to +150.
40 to +150
Unit V V A A ˚C ˚C
lifecycleaen
16.2±0.5dce 12.
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Productnnu
Fast Recovery Diodes (FRD)
MA651
Silicon planer type (cathode common)
For switching
s Features
q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature
* Sine half wave : 10ms/cycle
Symbol VRRM VRSM IF(AV) IFSM* Tj Tstg
Rating 200 200 20 150
– 40 to +150 – 40 to +150
Unit V V A A ˚C ˚C
lifecycleaen
16.2±0.5dce 12.5 Solder Dip
stage.
3.5 /
MA111
0.7
15.0±0.3 11.0±0.2
ø3.2±0.1
Unit : mm
5.0±0.2 3.2
21.0±0.5 15.0±0.2
2.0±0.2
1.1±0.1 5.45±0.3 10.9±0.5
2.0±0.1 0.6±0.
MA651 Datasheet
