q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature.
Sine half wave : 10ms/cycle
Symbol VRRM VRSM IF(AV) IFSM.
Tj Tstg
Rating 300 300 10 60.
40 to +150.
40 to +150
Unit V V A A ˚C ˚C
lifecycleaen
14.0±0.5dce Sol.
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Productnnu
Fast Recovery Diodes (FRD)
MA654
Silicon planer type (cathode common)
For switching
s Features
q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature
* Sine half wave : 10ms/cycle
Symbol VRRM VRSM IF(AV) IFSM* Tj Tstg
Rating 300 300 10 60
– 40 to +150 – 40 to +150
Unit V V A A ˚C ˚C
lifecycleaen
14.0±0.5dce Solder Dip
stage.
4.0 /
MA111
0.7±0.1
10.0±0.2 5.5±0.2
Unit : mm
4.2±0.2 2.7±0.2
4.2±0.2
ø3.1±0.1
16.7±0.3 7.5±0.2
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 -0.1
2.54±0.25
5.08±0.
MA654 Datasheet
