MA652 - Fast Recovery Diodes

Panasonic

Key Features

q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature.
Sine half wave : 10ms/cycle Symbol VRRM VRSM IF(AV) IFSM.
Tj Tstg Rating 200 200 20 150.
40 to +150.
40 to +150 Unit V V A A ˚C ˚C 14.0±0.5e/ Solder Dip 4.0 M.

MA652 fast recovery diodes by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA652
Manufacturer	Panasonic
File Size	151.22 KB
Description	Fast Recovery Diodes
Datasheet	MA652 Datasheet

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Other Datasheets by Panasonic

Part Number	Description
MA650	Silicon planer type (cathode common)
MA651	Fast Recovery Diodes
MA653	Silicon planer type (cathode common)
MA654	Fast Recovery Diodes
MA655	Fast Recovery Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Fast Recovery Diodes (FRD) MA652 Silicon planer type (cathode common) For high-frequency rectification s Features q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature * Sine half wave : 10ms/cycle Symbol VRRM VRSM IF(AV) IFSM* Tj Tstg Rating 200 200 20 150 – 40 to +150 – 40 to +150 Unit V V A A ˚C ˚C 14.0±0.5e/ Solder Dip 4.0 MA111 0.7±0.1 10.0±0.2 5.5±0.2 Unit : mm 4.2±0.2 2.7±0.2 4.2±0.2 ø3.1±0.1 16.7±0.3 7.5±0.2 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 -0.1 2.54±0.25 5.08±0.