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(IPD)
MIP2E1DMS
MOS
Ta = 25°C±3°C
VD VC ID IDP IC Tch Tstg
700 10 0.43 0.61 0.1 150 -55 ∼ +150
V V A A A °C °C
DIP7-A1
1: SOURCE 2: SOURCE 3: SOURCE 4: CONTROL
5: DRAIN 6: 7: SOURCE 8: SOURCE
: MIP2E1D
: 20087
SLB00104AJD
1
MIP2E1DMS
TC = 25°C±3°C
PWM *1 *1 *2 *2
*2
*2 / *2
*1 *1 *1 *1 *1 *3 *4 *4
*1
fosc MAXDC GPWM
m
VC = VC(CNT) – 0.2 V VC = VC(CNT) – 0.2 V
IC(SB) IC(OP)
VC < VC(ON) VC = VC(CNT) – 0.2 V
VC(ON) S1 = Open
VC(OFF) S1 = Open DVC S1 = Open
TSW/TTIM S1 = Open fTIM S1 = Open VC = 0 V
IC(CHG) VC = 5 V
VC(CNT) DVC(CNT) VD(MIN)
ILIMIT ton(BLK) td(OCL)
TOTP VCreset
S2 = Open
RDS(ON) IDSS VDSS tr tf
Rth(j-a)
ID = 0.1 mA VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.
MIP2E1DMS Datasheet
