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MIP2E1DMU
MOS
(IPD)
■ • •
■ •
■ Ta = 25°C ± 3°C
VD 700 VC 10 ID 0.43 IDP 0.61 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■ •
U-G4 •
1: Control 2: Source 3: Drain
■
: MIP2E1D
■
Control 1
Max Duty Clock
Sawtooth
SQ RQ
SQ V-I R Q
: 2010 3
SLB00036BJD
3 Drain MOSFET
2 Source 1
MIP2E1DMU
■ TC = 25°C ± 2°C
PWM /
) *:
* *
fOSC MAXDC GPWM
m
VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V
IC(SB) IC(OP) VC(ON) VC(OFF) ∆VC TSW / TTIM fTIM IC(CHG)
VC(CNT) * ∆VC(CNT)
VD(MIN)
VC < VC(ON) VC = VC(CNT) − 0.2 V
VC = 0 V VC = 5 V
* * * *
* *
ILIMIT ton(BLK) td(OCL) TOTP VC reset
RDS(ON) IDSS VDSS tr tf
Rth(ch-c) Rth(ch-a)
ID = 0.05 A VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.5 V
90 100 110 kHz
66 69 72
%
11 dB
15 mA/µs
0.05 0.30 0.6 0.7 1.8 2.7 5.1 6.0 6.6 4.1 5.0 5.5 0.5 1.
MIP2E1DMU Datasheet
