MTM232230LBF Description
T3 T4-EA-12901 MTM232230LBF Silicon N-channel MOS FET For switching.
MTM232230LBF Key Features
- Low drain-source On-state resistance : RDS(on) typ = 20 m (VGS = 4.0 V)
- Low drive voltage: 2.5 V drive
- Marking Symbol :BK
- Packaging Embossed type (Thermo-pression sealing) : 3 000 pcs / reel (standard)