MTM232230LBF - Silicon N-channel MOS FET

Datasheet Summary

Features

s.
Low drain-source On-state resistance : RDS(on) typ = 20 m  (VGS = 4.0 V).
Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant).
Marking Symbol :BK.
Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25 C Drain-source Voltage Gate-source Voltage VDS VGS 20 10 V Drain current ID 4.5 A Peak drain current.
1 Power dissipation.

Panasonic

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Datasheet Details

Part number	MTM232230LBF
Manufacturer	Panasonic
File Size	288.80 KB
Description	Silicon N-channel MOS FET
Datasheet	MTM232230LBF Datasheet
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DReovcisNioon. . T3 T4-EA-12901 MTM232230LBF Silicon N-channel MOS FET For switching  Features  Low drain-source On-state resistance : RDS(on) typ = 20 m  (VGS = 4.0 V)  Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)  Marking Symbol :BK  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Drain-source Voltage Gate-source Voltage VDS VGS 20 10 V Drain current ID 4.

Published: Apr 28, 2019 |