MTM68411 - Silicon P-channel MOS FET

Panasonic

Key Features

s.
Dual P-channel MOS FET in one package.
Low ON resistance: Ron = 23 mW (VGS = -5.0 V).
Small package and surface mounting type: WMini8-F1 (2.8 mm × 2.9 mm × 1.0 mm).
Low drive voltage: 1.8 V drive.
Package.
Code WMini8-F1.
Pin Name 1: Source 2: Gate 3: Source 4: Gate 5: Drain 6: Drain 7: Drain 8: Drain.
Marking Symbo: 1D.
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage V.

MTM68411 silicon p-channel mos fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	MTM68411
Manufacturer	Panasonic
File Size	248.25 KB
Description	Silicon P-channel MOS FET
Datasheet	MTM68411 Datasheet

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Full PDF Text Transcription (Reference)

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This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOS FETs (Small Signal) MTM68411 Silicon P-channel MOS FET For load switch circuits For switching circuits  Overview MTM68411 is the low ON resistance dual P-channel MOS FET designed for load switch circuits.  Features  Dual P-channel MOS FET in one package  Low ON resistance: Ron = 23 mW (VGS = -5.0 V)  Small package and surface mounting type: WMini8-F1 (2.8 mm × 2.9 mm × 1.0 mm)  Low drive voltage: 1.