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MTM68411 - Silicon P-channel MOS FET

Datasheet Summary

Features

  • s.
  • Dual P-channel MOS FET in one package.
  • Low ON resistance: Ron = 23 mW (VGS = -5.0 V).
  • Small package and surface mounting type: WMini8-F1 (2.8 mm × 2.9 mm × 1.0 mm).
  • Low drive voltage: 1.8 V drive.
  • Package.
  • Code WMini8-F1.
  • Pin Name 1: Source 2: Gate 3: Source 4: Gate 5: Drain 6: Drain 7: Drain 8: Drain.
  • Marking Symbo: 1D.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage V.

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Datasheet Details

Part number MTM68411
Manufacturer Panasonic
File Size 248.25 KB
Description Silicon P-channel MOS FET
Datasheet download datasheet MTM68411 Datasheet
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This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOS FETs (Small Signal) MTM68411 Silicon P-channel MOS FET For load switch circuits For switching circuits  Overview MTM68411 is the low ON resistance dual P-channel MOS FET designed for load switch circuits.  Features  Dual P-channel MOS FET in one package  Low ON resistance: Ron = 23 mW (VGS = -5.0 V)  Small package and surface mounting type: WMini8-F1 (2.8 mm × 2.9 mm × 1.0 mm)  Low drive voltage: 1.
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