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MTM765200LBF - Dual N-channel MOSFET

Key Features

  • s.
  • Low drain-source ON resistance:RDS(on)typ = 80 mΩ（VGS = 4.0 V).
  • Low drive voltage: 1.8 V drive.
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant).
  • Marking Symbol: JA.
  • Basic Part Number Dual Nch MOS 20 V (Individual).
  • Packaging MTM765200LBF Embossed type (Thermo-compression sealing): ɹ3 000 pcs / reel (standard).
  • Absolute Maximum RatingsɹTa = 25 °C Parameter Symbol Rating Drain-source Voltage VDS 20 FET1 Gate-source Voltage FE.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTM765200LBF Dual N-channel MOSFET For switching MTM765200LBF Unit: mm  Features  Low drain-source ON resistance:RDS(on)typ = 80 mΩ（VGS = 4.0 V)  Low drive voltage: 1.8 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: JA  Basic Part Number Dual Nch MOS 20 V (Individual)  Packaging MTM765200LBF Embossed type (Thermo-compression sealing): ɹ3 000 pcs / reel (standard)  Absolute Maximum RatingsɹTa = 25 °C Parameter Symbol Rating Drain-source Voltage VDS 20 FET1 Gate-source Voltage FET2 Drain Current Drain Current (Pulsed) *1 Total power dissipation Overall Channel temperature VGS ±10 ID 2.