Datasheet Summary
Power Transistors
Silicon PNP epitaxial planar type
For power amplification
Unit: mm s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0 q q q
2.5±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping (TC=25˚C)
Ratings
- 60
- 60
- 6
- 6
- 3
- 1 15 2 150
- 55 to +150 Unit V V V A A A W ˚C ˚C
90°
1.2±0.1
18.0±0.5 Solder Dip s...