Datasheet Summary
Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification s Features q q q
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings
- 60
- 80
- 60
- 80
- 5
- 5
- 3 35 2 150
- 55 to +150 Unit
Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.1±0.2 8.0±0.2 Solder Dip s...
