Datasheet Summary
Transistor
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
4.0 s Features q q q
0.65 max.
1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
- VCBO VCEO VEBO ICP IC PC- Tj Tstg 1cm2
20 20 15 1.5 0.7 1 150
- 55 ~ +150
V V V A A W ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+
- 0.05
Note: In addition to the lead type...