Datasheet Summary
Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10
- 0.05
Unit: mm
0.16+0.10
- 0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.50+0.25
- 0.05
2.8+0.2
- 0.3
(0.95) (0.95) 1.9±0.1 2.90+0.20
- 0.05 10˚
1.1+0.2
- 0.1
Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
VDSX VGDO ID IG PD Tch Tstg
- 30 20 10 150 150
- 55 to +150
V V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0 to...