Datasheet Summary
Silicon Junction FETs (Small Signal)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.65±0.15
+0.2 unit: mm
0.65±0.15
- 0.3
- 0.05
+0.25 s Features q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.95 2.9
- 0.05
1.9±0.2
+0.2
- 0.05
+0.1
Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature
VGSO ID IG PD Tj Tstg
- 40 1 10 150 150
- 55 to +150
V mA mA mW °C °C
1: Source 2:...