Datasheet Summary
Silicon MOS FETs (Small Signal)
Silicon N-Channel MOS FET
Unit : mm
For switching
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
- Low ON-resistance RDS(ON)
- High-speed switching
- Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
45˚
1.0- 0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0+0.25
- 0.20
0.4±0.04 s...
