Datasheet Summary
Silicon MOS FETs (Small Signal)
2SK0664 (2SK664)
Silicon N-Channel MOS FET unit: mm
For switching I Features
(0.425)
0.3+0.1
- 0.0 3
0.15+0.10
- 0.05
1.25±0.10
(0.65) (0.65) 1.3±0.1 2.0±0.2 10°
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDSS VGSO ID IDP PD Tch Tstg
Ratings 50 8 100 200 150 150
- 55 to +150
Unit V V mA mA mW °C °C
1: Gate 2: Source 3: Drain
0 to 0.1
0.9±0.1
0.9+0.2
-...