Datasheet Summary
Intelligent Power Devices (IPDs)
Silicon MOS IC s Features q Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. q Oscillation circuit is incorporated q EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p)
10- 0.25±0.1 unit: mm
3.0±0.2 2 to 12˚ q EL drive
8- 0.5±0.07 s Applications s...