Datasheet4U Logo Datasheet4U.com

PE4210 - SPDT UltraCMOS RF Switch

General Description

The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz.

This singlesupply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input.

Key Features

  •  Single 3-volt power supply.
  •  Low Insertion loss: 0.30 dB at 1000 MHz, 0.45 dB at 2000 MHz.
  •  High isolation of 35 dB at 1000 MHz, 25 dB at 2000 MHz.
  •  Typical input 1 dB compression point of +14.5 dBm.
  •  Single-pin CMOS or TTL logic control.
  •  Packaged in a small 8-lead MSOP Figure 1. Functional Diagram Figure 2. Package Type 8-lead MSOP Obsolete 71-0014-01 Document No. 70-0037-06 │ www. psemi. com ©2005-2011 Peregrine Semiconductor Corp. All rights reserved. Pag.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE423211 SPDT RF Switch pSemi
PE423422 SPDT RF Switch pSemi
PE423641 SP4T RF Switch pSemi
PE42420 SPDT RF Switch pSemi
PE42421 SPDT RF Switch pSemi

Other Datasheets by pSemi (Peregrine Semiconductor)

Part Number Description
PE42020 True DC RF Switch
PE4220 SPDT UltraCMOS RF Switch DC
PE4230 SPDT High Power UltraCMOS RF Switch
PE4231 SPDT High Power UltraCMOS
PE4232 SPST CATV UltraCMOS Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +14 dBm can be achieved. The PE4210 also exhibits input-output isolation of better than 35 dB at 1000 MHz and is offered in a small 8-lead MSOP package. The PE4210 is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.