PE42562 Datasheet Text
PE42562
Document Category: Product Specification
UltraCMOS® SP6T RF Switch, 9 kHz- 8 GHz
Features
- High isolation: 35 dB @ 6 GHz
- Low insertion loss: 1.1 dB @ 6 GHz
- Fast switching time of 210 ns
- Power handling of 33 dBm CW
- Logic select (LS) pin provides maximum control logic flexibility
- Terminated all-off state mode
- External VSS pin to eliminate spur
- Packaging
- 24-lead 4 × 4 × 0.85 mm QFN
Applications
- Test and measurement
- Wireless applications up to 8 GHz
- Filter bank switching
- RF signal routing
Figure 1
- PE42562 Functional Diagram RFC
RF1 RF2 RF3
RF6 RF5 RF4
CMOS Control Driver and ESD
V1 V2 V3 VSS_EXT switch configuration
50Ω
Product Description
The PE42562 is a HaRP™ technology-enhanced absorptive SP6T RF switch that supports a frequency range from 9 kHz to 8 GHz. An external VSS pin is available for bypassing the internal negative voltage generator in order for the PE42562 to deliver spur-free performance. It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement (T&M) and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE42562 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-oninsulator (SOI) technology. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
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