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GaAs Infrared Emitting Diodes
Long T-1 Plastic Package — 940 nm
VTE3322LA, 24LA
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 50A LONG T-1 CHIP SIZE: .011" X .011"
This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: -40°C to 100°C 100 mW 1.43 mW/°C 50 mA 0.71 mA/°C 3A -.8%/°C 5.0V Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.
VTE3324LA Datasheet
