VTE3373LA - GaAlAs Infrared Emitting Diodes

Description

This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications.

It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.

PerkinElmer Optoelectronics

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Datasheet Details

Part number	VTE3373LA
Manufacturer	PerkinElmer Optoelectronics
File Size	29.91 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE3373LA Datasheet
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GaAlAs Infrared Emitting Diodes Long T-1 (3 mm) Plastic Package — 880 nm VTE3372LA, 74LA PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 100 mW 1.43 mW/°C 50 mA 0.71 mA/°C 2.5 A -.

Published: Apr 17, 2005 |