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VTE1013 - GaAs Infrared Emitting Diodes

General Description

This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.

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Datasheet Details

Part number VTE1013
Manufacturer PerkinElmer Optoelectronics
File Size 29.72 KB
Description GaAs Infrared Emitting Diodes
Datasheet download datasheet VTE1013 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs Infrared Emitting Diodes TO-46 Flat Window Package — 940 nm VTE1013 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -55°C to 125°C 200 mW 2.11 mW/°C 100 mA 1.05 mA/°C 3.0 A -.