Datasheet Details
| Part number | VTE1013 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 29.72 KB |
| Description | GaAs Infrared Emitting Diodes |
| Datasheet | VTE1013_PerkinElmerOptoelectronics.pdf |
|
|
|
Overview: GaAs Infrared Emitting Diodes TO-46 Flat Window Package — 940 nm VTE1013 PACKAGE DIMENSIONS inch.
| Part number | VTE1013 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 29.72 KB |
| Description | GaAs Infrared Emitting Diodes |
| Datasheet | VTE1013_PerkinElmerOptoelectronics.pdf |
|
|
|
CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.): -55°C to 125°C 200 mW 2.11 mW/°C 100 mA 1.05 mA/°C 3.0 A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.
| Part Number | Description |
|---|---|
| VTE1063 | GaAlAs Infrared Emitting Diodes |
| VTE1113 | GaAs Infrared Emitting Diodes |
| VTE1163 | GaAlAs Infrared Emitting Diodes |
| VTE1261 | GaAlAs Infrared Emitting Diodes |
| VTE1262 | GaAlAs Infrared Emitting Diodes |
| VTE1281-1 | GaAlAs Infrared Emitting Diodes |
| VTE1281-2 | GaAlAs Infrared Emitting Diodes |
| VTE1281F | GaAlAs Infrared Emitting Diodes |
| VTE1281W-1 | GaAlAs Infrared Emitting Diodes |
| VTE1281W-2 | GaAlAs Infrared Emitting Diodes |