VTE1113 - GaAs Infrared Emitting Diodes

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PerkinElmer Optoelectronics

Datasheet Details

Part number	VTE1113
Manufacturer	PerkinElmer Optoelectronics
File Size	25.39 KB
Description	GaAs Infrared Emitting Diodes
Datasheet	VTE1113 Datasheet
Additional preview pages of the VTE1113 datasheet.

Product details

Description

CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Power Output (Typ.): -55°

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Published: Apr 17, 2005 |