VTE1113 datasheet by PerkinElmer Optoelectronics.
| Part number | VTE1113 |
|---|---|
| Datasheet | VTE1113_PerkinElmerOptoelectronics.pdf |
| File Size | 25.39 KB |
| Manufacturer | PerkinElmer Optoelectronics |
| Description | GaAs Infrared Emitting Diodes |
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CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications. RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating:.
View all PerkinElmer Optoelectronics datasheets
| Part Number | Description |
|---|---|
| VTE1163 | GaAlAs Infrared Emitting Diodes |
| VTE1013 | GaAs Infrared Emitting Diodes |
| VTE1063 | GaAlAs Infrared Emitting Diodes |
| VTE1261 | GaAlAs Infrared Emitting Diodes |
| VTE1262 | GaAlAs Infrared Emitting Diodes |
| VTE1281-1 | GaAlAs Infrared Emitting Diodes |
| VTE1281-2 | GaAlAs Infrared Emitting Diodes |
| VTE1281F | GaAlAs Infrared Emitting Diodes |
| VTE1281W-1 | GaAlAs Infrared Emitting Diodes |
| VTE1281W-2 | GaAlAs Infrared Emitting Diodes |
