VTE1163
VTE1163 is GaAlAs Infrared Emitting Diodes manufactured by PerkinElmer Optoelectronics.
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, Ga Al As, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -55°C to 125°C 200 m W 2.11 m W/°C 100 m A 1.05 m A/°C 3A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 m A Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 µA 880 nm 35 p F
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also Ga Al As curves, pages 108-110)
Output Irradiance Part Number Ee m W/cm2 Min. VTE1163 22 Typ. 28 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie m W/sr Min. 285 Total Power PO m W Typ. 110 Test Current IFT m A (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 2.8 Max. 3.5 ±10° Half Power Beam Angle θ1/2
Refer to General Product Notes, page 2.
Perkin Elmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: .perkinelmer./opto...
