VTE1063 - GaAlAs Infrared Emitting Diodes

Product Overview

PerkinElmer Optoelectronics

Datasheet Details

Part number	VTE1063
Manufacturer	PerkinElmer Optoelectronics
File Size	32.51 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1063 Datasheet
Additional preview pages of the VTE1063 datasheet.

Product details

Description

CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Pow

📁 Similar Datasheet

VTE180-2F32342 - Photoelectric sensors (SICK)
VTE180-2F32444 - Photoelectric sensors (SICK)
VTE180-2F32447 - Photoelectric sensors (SICK)
VTE180-2F32449 - Photoelectric sensors (SICK)
VTE180-2F32482 - Photoelectric sensors (SICK)
VTE180-2F32484 - Photoelectric sensors (SICK)
VTE180-2F32487 - Photoelectric sensors (SICK)
VTE180-2F32489 - Photoelectric sensors (SICK)

Other Datasheets by PerkinElmer Optoelectronics

VTE1013 - GaAs Infrared Emitting Diodes
VTE1113 - GaAs Infrared Emitting Diodes
VTE1163 - GaAlAs Infrared Emitting Diodes
VTE1261 - GaAlAs Infrared Emitting Diodes
VTE1262 - GaAlAs Infrared Emitting Diodes
VTE1281-1 - GaAlAs Infrared Emitting Diodes

Published: Apr 17, 2005 |