MX0912B100 Datasheet NPN Microwave Power Transistors

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product speciﬁcation Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product speciﬁcation NPN microwave power.

Datasheet Details

Part number	MX0912B100
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	98.88 KB
Description	NPN microwave power transistors
Datasheet	MX0912B100_Philips.pdf

General Description

NPN silicon planar epitaxial microwave power transistors.

The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells.

It is recommended for new designs.

Key Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry improves power sharing and low thermal resistance.
Input and output matching cell allows an easier design of circuits.

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More Datasheets from Philips Semiconductors (now NXP Semiconductors)

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