Datasheet Details
| Part number | MX0912B100 |
|---|---|
| Manufacturer | Philips Semiconductors (now NXP Semiconductors) |
| File Size | 98.88 KB |
| Description | NPN microwave power transistors |
| Datasheet |
 MX0912B100 Datasheet
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Description
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells.
It is recommended for new designs.
Features
- Interdigitated structure provides high emitter efficiency.
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Multicell geometry improves power sharing and low thermal resistance.
- Input and output matching cell allows an easier design of circuits.