MX0912B100 Overview
NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is remended for new designs.
MX0912B100 Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry improves power sharing and low thermal resistance
- Input and output matching cell allows an easier design of circuits