Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B100Y; MZ0912B100Y NPN microwave power transistors
Product specification Supersedes data of June 1992 1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistors
Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry improves power sharing and low thermal resistance
- Input and output matching cell allows an easier design of circuits. APPLICATIONS
- mon base class-C broadband pulse power amplifiers...