MX0912B351Y Overview
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in mon base configuration and specified in class C. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C broadband amplifier.
MX0912B351Y Key Features
- Interdigitated structure; high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Input and output matching cell allows an easier design of circuits
MX0912B351Y Applications
- SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di