MX0912B351Y Datasheet NPN Microwave Power Transistors

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product speciﬁcation NPN microwave power.

Datasheet Details

Part number	MX0912B351Y
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	92.76 KB
Description	NPN microwave power transistors
Datasheet	MX0912B351Y_Philips.pdf

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

It is mounted in common base configuration and specified in class C.

3 2 Top view olumns MX0912B351Y PINNING - SOT439A PIN 1 2 3 collector emitter base connected to ﬂange DESCRIPTION 1 c b 3 e MAM045 Fig.1 Simplified outline and symbol.

Key Features

Interdigitated structure; high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input and output matching cell allows an easier design of circuits.

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