Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B251Y NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
Features
- Interdigitated structure; high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Input and output matching cell allows an easier design of circuits. APPLICATIONS
PINNING
- SOT439A PIN 1 2 3 collector...