Datasheet Details
| Part number | MX0912B251Y |
|---|---|
| Manufacturer | Philips Semiconductors (now NXP Semiconductors) |
| File Size | 92.34 KB |
| Description | NPN microwave power transistors |
| Datasheet |
 MX0912B251Y Datasheet
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Description
Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
Features
- Interdigitated structure; high emitter efficiency.
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Input and output matching cell allows an easier design of circuits.