Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH13 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Preliminary specification
2001 Dec 13
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Preliminary specification
Features
- 300 mW total power dissipation
- Very small 1.6 × 1.2 mm ultra thin package
- Improved thermal behaviour due to flat leads
- Self alignment during soldering due to straight leads
- Replaces two SC-75/SC-89 packaged transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs.
APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit...