SA3600 Datasheet | Philips Semiconductors

INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 March 18 1999 Nov 02 Philips Semiconductors Philips Semiconductors Product specification Low voltage dual-band RF front-end DESCRIPTION The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz f T Bi CMOS process- QUBi C2. The low-band (LB) receiver is a bined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 d B noise figure (NF) at 881 MHz with 17 d B of gain and an IIP3 of - 7 d Bm. The wide-dynamic range mixer has a 9.5 d B NF at 881 MHz with 9.5 d B of gain and an IIP3 of +6 d Bm. The high-band (HB) receiver is a bined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 d B NF at 1960 MHz with 16 d B of gain and an IIP3 of - 5 d Bm. The wide-dynamic range mixer has a 8.5 d B NF at 1960 MHz with 8.5 d B of gain and an IIP3 of +5.5 d Bm. APPLICATIONS - 800 to 1000 MHz analog and digital receivers - 1800 to 2000 MHz digital receivers - Portable radios - Mobile munications equipment PIN CONFIGURATION HB_LNA_OUT 1 GND 2 HB_LNA_IN 3 VCC 4 24 LB_LNA_OUT 23 GND 22 LB_LNA_IN 21 VCC 20 LB_MXR_IN 19 GND 18 MXR+_OUT 17 MXR- _OUT 16 GND 15 LB_VCO_IN 14 PD3 13 HB_VCO_IN Features HB_MXR+_IN 5 HB_MXR- _IN 6 PD1 7 GND 8 HB_VCO_OUT 9 PD2 10 GND 11 LB_VCO_OUT 12 - Low current consumption: LB ICC = 14.5 m A; HB ICC = 20.5 m A - Outstanding low- and high-band noise figure - LNAs with gain control (30 d B gain step) - LO input and output buffers - Selectable frequency doubler - On chip logic for network selection and power down - Very small outline package ORDERING INFORMATION TYPE NUMBER...