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SA3600 Datasheet

Manufacturer: Philips Semiconductors (now NXP Semiconductors)
SA3600 datasheet preview

Datasheet Details

Part number SA3600
Datasheet SA3600_PhilipsSemiconductors.pdf
File Size 172.25 KB
Manufacturer Philips Semiconductors (now NXP Semiconductors)
Description Low voltage dual-band RF front-end
SA3600 page 2 SA3600 page 3

SA3600 Overview

The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process QUBiC2. The low-band (LB) receiver is a bined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of 7 dBm.

SA3600 Key Features

  • Low current consumption: LB ICC = 14.5 mA; HB ICC = 20.5 mA
  • Outstanding low- and high-band noise figure
  • LNAs with gain control (30 dB gain step)
  • LO input and output buffers
  • Selectable frequency doubler
  • On chip logic for network selection and power down
  • Very small outline package

SA3600 Applications

  • 800 to 1000 MHz analog and digital receivers
  • 1800 to 2000 MHz digital receivers
Philips Semiconductors (now NXP Semiconductors) logo - Manufacturer

More Datasheets from Philips Semiconductors (now NXP Semiconductors)

See all Philips Semiconductors (now NXP Semiconductors) datasheets

Part Number Description
SA3601 Low voltage dual-band RF front-end
SA3603 Cellular-band low voltage front-end
SA3604 PCS-band low voltage front-end

SA3600 Distributor

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