SA3601 Datasheet | Philips Semiconductors

INTEGRATED CIRCUITS SA3601 Low voltage dual-band RF front-end Preliminary specification 1999 Nov 09 Philips Semiconductors Philips Semiconductors Preliminary specification Low voltage dual-band RF front-end DESCRIPTION The SA3601 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz f T Bi CMOS process- QUBi C2. The low-band (LB) receiver is a bined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 d B noise figure (NF) at 881 MHz with 17 d B of gain and an IIP3 of - 7 d Bm. The wide-dynamic range mixer has a 9.5 d B NF at 881 MHz with 9.5 d B of gain and an IIP3 of +6 d Bm. The high-band (HB) receiver is a bined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 d B NF at 1960 MHz with 16 d B of gain and an IIP3 of - 5 d Bm. The wide-dynamic range mixer has a 8.5 d B NF at 1960 MHz with 8.5 d B of gain and an IIP3 of +5.5 d Bm. APPLICATIONS - 800 to 1000 MHz analog and digital receivers - 1800 to 2000 MHz digital receivers - Portable radios - Mobile munications equipment PIN CONFIGURATION HBLNA_OUT LBLNA_OUT Features - Low current consumption: LB ICC = 14 m A; HB ICC = 15.5 m A - Outstanding low- and high-band noise figure - LNAs with gain control (30 d B gain step) - LO input and output buffers - Frequency doubler - On chip logic for network selection and power down - Very small outline package HBLNA_IN GND VCC HBMXR+_IN HBMXR- _IN PD1 VCC GND 1 2 3 4 5 6 7 8 9 PD2 25 24 23 22 GND VCC LBMXR_IN GND MXR+_OUT MXR- _OUT GND...