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PDC0974X - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,70A, RDS(ON) =5.8mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDC0974X

Datasheet Details

Part number PDC0974X
Manufacturer Potens semiconductor
File Size 515.19 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDC0974X Datasheet
Additional preview pages of the PDC0974X datasheet.

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Full PDF Text Transcription

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100V N-Channel MOSFETs PDC0974X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DD DD SSSG G D S BVDSS 100V RDSON 5.8m ID 70A Features  100V,70A, RDS(ON) =5.
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