PDC3701T Datasheet | Potens semiconductor

Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1D1 D1 D2 2 G2 S2 G1 S1 G1 G2 S1 S2 BVDSS 30V -30V RDSON 12m 29m ID 23.3A -15.2A Features - Fast switching - Green Device Available - Suit for 4.5V Gate Drive Applications - 100% EAS Guaranteed Applications - DC Fan - Motor Drive Applications - Networking - Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain...