Potens semiconductor PDC3701T
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDC3701T |
|---|---|
| Datasheet | PDC3701T Download |
| Manufacturer |  Potens semiconductor |
| Description | 30V N+P Dual Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK5x6 Dual Pin Configuration D1 D2 D1D2 D2 2 D1 G1 G2 S1 G1S2G2 S1 S2 BVDSS 30V -30V RDSON 12m 29m ID 23.3A -15.2AFEATURES
● Fast switching● Green Device Available
● Suit for 4.5V Gate Drive
APPLICATIONS
● 100% EAS GuaranteedAPPLICATIONS
● DC Fan● Motor Drive
APPLICATIONS
● Networking● Half / Full Bridge Topology
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2,6 Single Pulse Avalanched Current2 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 30 -30 ±20 ±20 23.3 -15.2 14.7 -9.6 93.2 -60.8 39.2 39.2 28 28 17.4 0.14 -55 to 150 -55 to 150 Units V V A...
