PDC3703V Datasheet | Potens semiconductor

Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Dual 2EP Pin Configuration D1D1 D2 D2 D1 D2 2 S1G1S2G2 G1 G2 S1 S2 BVDSS 30V -30V RDSON 20m 18m ID 12A -16A Features - Fast switching - Green Device Available - Suit for 4.5V Gate Drive Applications Applications - DC Fan - Motor Drive Applications - Networking - Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous...