Datasheet Details
| Part number | PDC3712V |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 536.36 KB |
| Description | N+P Dual Channel MOSFET |
| Download | PDC3712V Download (PDF) |
|
|
| Part number | PDC3712V |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 536.36 KB |
| Description | N+P Dual Channel MOSFET |
| Download | PDC3712V Download (PDF) |
|
|
|
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
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|---|---|
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