Datasheet Summary
30V Dual N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK3X3 Dual Pin Configuration
D1D1D2D2
D1 G1 G2
S1G1S2G2
S1
D2 S2
BVDSS 30V
RDSON 13m
ID 35A
Features
- 30V,35A, RDS(ON) =13mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- MB /...