Datasheet Summary
30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Dual Pin Configuration
D1 D1D2 D2
D1
S1G1S2 G2
G1 G2 S1
D2 S2
BVDSS 30V
RDSON 20m
ID 20A
Features
- 30V,20A, RDS(ON) =20mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- MB / VGA /...