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PDC3901X - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-100A, RDS(ON) =3.3mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDC3901X

Datasheet Details

Part number PDC3901X
Manufacturer Potens semiconductor
File Size 352.37 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDC3901X Datasheet
Additional preview pages of the PDC3901X datasheet.

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Full PDF Text Transcription

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD S S SG D S PDC3901X BVDSS -30V RDSON 3.3m ID -100A Features  -30V,-100A, RDS(ON) =3.3mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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