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PDC3905Z - 30V P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-30A, RDS(ON) =18mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDC3905Z

Datasheet Details

Part number PDC3905Z
Manufacturer Potens semiconductor
File Size 617.26 KB
Description 30V P-Channel MOSFETs
Datasheet download datasheet PDC3905Z Datasheet
Additional preview pages of the PDC3905Z datasheet.

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Full PDF Text Transcription

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30V P-Channel MOSFETs PDC3905Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DDDD S S SG G D S BVDSS -30V RDSON 15mΩ ID -30A Features  -30V,-30A, RDS(ON) =18mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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