Potens semiconductor PDC3903X
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDC3903X |
|---|---|
| Datasheet | PDC3903X Download |
| Manufacturer |  Potens semiconductor |
| Description | 30V P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK5X6 Pin Configuration D D D DD D D DD G S SSG GS S S S BVDSS -30V RDSON 8.5m ID -60AFEATURES
● -30V,-60A, RDS(ON) =8.5mΩ@VGS = -10V● Fast switching
● Green Device Available
● Suit for -4.5V Gate Drive
APPLICATIONS
APPLICATIONS
● MB / VGA / Vcore● POL
APPLICATIONS
● Load Switch● LED Application
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Rating -30 ±20 -60 -38 -240 96 0.77 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Typ. ----- Max.
