PDH6966A Datasheet PDF - Potens semiconductor N-Channel MOSFETs Specs

PDH6966A - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

60V,85A, RDS(ON) =8.5mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Datasheet Details

Part number	PDH6966A
Manufacturer	Potens semiconductor
File Size	718.41 KB
Description	N-Channel MOSFETs
Datasheet	PDH6966A Datasheet
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Full PDF Text Transcription

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60V N-Channel MOSFETs PDH6966A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration D S G G D S BVDSS 60V RDSON 8.5m ID 85A Features  60V,85A, RDS(ON) =8.

Published: Aug 22, 2018 |