PDH6980-5 Datasheet PDF - Potens semiconductor N-Channel MOSFETs Specs

PDH6980-5 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

65V,180A, RDS(ON) =2.2mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Datasheet Details

Part number	PDH6980-5
Manufacturer	Potens semiconductor
File Size	673.40 KB
Description	N-Channel MOSFETs
Datasheet	PDH6980-5 Datasheet
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Full PDF Text Transcription

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65V N-Channel MOSFETs PDH6980-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration D BVDSS 65V RDSON 2.2m ID 180A Features  65V,180A, RDS(ON) =2.

Published: Aug 22, 2018 |