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PDK2314 - N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 20V, 5.6A, RDS(ON) =26mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number PDK2314
Manufacturer Potens semiconductor
File Size 593.34 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDK2314 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V N-Channel MOSFETs PDK2314 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D D S D G G S BVDSS 20V RDSON 26mΩ ID 5.6A Features  20V, 5.6A, RDS(ON) =26mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.