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PDK2314 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 5.6A, RDS(ON) =26mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet preview – PDK2314

Datasheet Details

Part number PDK2314
Manufacturer Potens semiconductor
File Size 593.34 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDK2314 Datasheet
Additional preview pages of the PDK2314 datasheet.

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20V N-Channel MOSFETs PDK2314 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D D S D G G S BVDSS 20V RDSON 26mΩ ID 5.6A Features  20V, 5.6A, RDS(ON) =26mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.
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