Datasheet4U Logo Datasheet4U.com

PDK3912 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,7.5A, RDS(ON) =24mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet preview – PDK3912

Datasheet Details

Part number PDK3912
Manufacturer Potens semiconductor
File Size 668.37 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDK3912 Datasheet
Additional preview pages of the PDK3912 datasheet.

📁 Similar Datasheet

  • PDK-P-M - QUARTZ PRESSURE TRANSDUCER (Advanced XTAL Products)
  • PDK82C13 - Field Programmable Processor (PADAUK)
  • PDK82C13-D - Field Programmable Processor (PADAUK)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
30V N-Channel MOSFETs PDK3912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D S D G G D S BVDSS 30V RDSON 24m ID 7.5A Features  30V,7.
Published: |