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PDK2612A - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V/6.5A, RDS(ON) =22mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDK2612A

Datasheet Details

Part number PDK2612A
Manufacturer Potens semiconductor
File Size 640.99 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDK2612A Datasheet
Additional preview pages of the PDK2612A datasheet.

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Full PDF Text Transcription

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20V N-Channel MOSFETs PDK2612A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D S D G G D S BVDSS 20V RDSON 22m ID 6.5A Features  20V/6.5A, RDS(ON) =22mΩ@VGS = 4.
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