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PDL3907 - 30V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-6A, RDS(ON) =22mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDL3907

Datasheet Details

Part number PDL3907
Manufacturer Potens semiconductor
File Size 729.12 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet PDL3907 Datasheet
Additional preview pages of the PDL3907 datasheet.

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30V P-Channel MOSFETs PDL3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D D G BVDSS RDSON ID -30V 22m -6A Features  -30V,-6A, RDS(ON) =22mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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