PDL3907 - 30V P-Channel MOSFET

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-6A, RDS(ON) =22mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDL3907 30v p-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDL3907
Manufacturer	Potens semiconductor
File Size	729.12 KB
Description	30V P-Channel MOSFET
Datasheet	PDL3907 Datasheet

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30V P-Channel MOSFETs PDL3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D D G BVDSS RDSON ID -30V 22m -6A Features  -30V,-6A, RDS(ON) =22mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.