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PDL3911 - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-4.5A, RDS(ON) =55mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDL3911

Datasheet Details

Part number PDL3911
Manufacturer Potens semiconductor
File Size 754.58 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDL3911 Datasheet
Additional preview pages of the PDL3911 datasheet.

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30V P-Channel MOSFETs PDL3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D G D BVDSS -30V RDSON 55m ID -4.5A Features  -30V,-4.5A, RDS(ON) =55mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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