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PDN2307 - P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number PDN2307
Manufacturer Potens semiconductor
File Size 578.92 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDN2307 Datasheet

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Full PDF Text Transcription (Reference)

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20V P-Channel MOSFETs PDN2307 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3 Pin Configuration D D S G G S BVDSS -20V RDSON 26mΩ ID -6.5A Features  -20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.